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研討會論文 |
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1. |
許健(Gene Sheu)、許健(Gene Sheu) 2009.08.15~2009.08.19
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Dependence of Breakdown Voltage on Drift Length and Linear Doping Gradients in SOI RESURF LDMOS Devices |
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2009 ICEMI |
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2. |
郭宇鋒(Yufeng Guo)、王至剛(Zhigong Wang1)、許健(Gene Sheu)、許健(Gene Sheu) 2009.07.23~2008.07.25
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VARIATION OF LATERAL THICKNESSTECHNIQUES IN SOI LATERAL HIGH VOLTAGE DEVICE |
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2009 International Conference on Communications, Circuits and Systems(ICCCAS2009) |
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3. |
許健(Gene Sheu)、許健(Gene Sheu) 2009.12.13~2009.12.16
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Combining 2D and 3D Device Simulation for Optimizing LDMOS Design |
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2009 IEEE International Conference on Electronics Circuits and Systems |
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4. |
(Hsin-Chiang You)、(Yen-Ling Liu)、(Shyh-chang Tsaur)、許健(Gene Sheu)、許健(Gene Sheu) 2009.03.19~2009.03.20
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Simulation Details for the Electrical Field Distribution and Breakdown Voltage of0.15μm Thin Film SOI Power Device |
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The Electrochemical Society Transaction 2009 (◎ISTC CSTIC 2009) |
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5. |
許健(Gene Sheu)、楊紹明、許愉珊、許健(Gene Sheu) 2009.05.24~2009.05.25
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A High Performance 80V Smart LDMOS Power Device Based on thin oxide technology |
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istc cstic 2009 |
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6. |
楊紹明(Shao-Ming Yang)、許健(Gene Sheu) 2009.08.16~2009.08.19
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Dependence of Breakdown Voltage on Drift Length and Linear Doping Gradients in SOI RESURF LDMOS Devices |
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The International Conference on Electronic Measurement & Instruments (ICEMI) |
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7. |
楊紹明(Shao-Ming Yang) 2010.08.3 ~2010.08.6
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Optimizing NSCR ESD Protection Device for BCD 40V Technology |
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第二十一屆超大型積體電路設計暨計算機輔助設計技術研討會 |
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