|
非SCI、SSCI、A&HCI、EI、TSSCI...等具審查機制論文 |
1. |
楊紹明(Shao-Ming Yang)、許健(Gene Sheu)、蔡宗叡(Jung-Ruey Tsai) ,2010-11, ()
|
ICSICT 2010 2010卷2010期:1838頁~1840頁 |
A 5V/200V SOI Device with a Vertically Linear Graded Drift Region |
2. |
楊紹明(Shao-Ming Yang)、許健(Gene Sheu)、蔡宗叡(Jung-Ruey Tsai) ,2010-11, (已刊登)
|
ICSICT 2010 卷期:1838頁~1840頁 |
A 5V/200V SOI Device with a Vertically Linear Graded Drift Region |
3. |
許健(Gene Sheu)、蔡宗叡(Jung-Ruey Tsai)、楊紹明(Shao-Ming Yang) ,2011-11, (已刊登)
|
tencon 2010 卷期:1356頁~1360頁 |
Self-Consistent Electro-Thermo-Mechanical Analysis of AlN Passivation Effect on AlGaN/GaN HEMTs |
4. |
蔡宗叡(Jung-Ruey Tsai)、許健(Gene Sheu)、楊紹明(Shao-Ming Yang) ,2011-11, (已刊登)
|
tencon 2010 卷期:760頁~763頁 |
Development of ESD Robustness Enhancement of a Novel 800V LDMOS Multiple RESURF with Linear P-top Rings |
5. |
許健(Gene Sheu)、楊紹明(Shao-Ming Yang)、蔡宗叡(Jung-Ruey Tsai) ,2011-11, (已刊登)
|
tencon 2010 卷期:752頁~755頁 |
Design of Multiple RESURF LDMOS with P-top rings and STI regions in 65nm CMOS Technology |
|
|