|
|
|
非SCI、SSCI、A&HCI、EI、TSSCI...等具審查機制論文 |
|
1. |
許健(Gene Sheu)、楊紹明(Shao-Ming Yang) ,2011-07, (已刊登)
|
|
tencon 2010 2010卷期:978頁~990頁 |
|
ESD simulation on GGNMOS for 40V BCD |
|
2. |
許健(Gene Sheu)、楊紹明(Shao-Ming Yang) ,2011-, (已刊登)
|
|
tencon 2010 2010卷2010期:75頁~77頁 |
|
A Novel 800V Multiple RESURF LDMOS Utilizing |
|
3. |
許健(Gene Sheu)、楊紹明(Shao-Ming Yang) ,2011-07, (已刊登)
|
|
tencon 2010 2010卷2010期:71頁~74頁 |
|
An 800 Volts High Voltage Interconnection Level |
|
4. |
楊紹明(Shao-Ming Yang)、許健(Gene Sheu)、蔡宗叡(Jung-Ruey Tsai) ,2010-11, ()
|
|
ICSICT 2010 2010卷2010期:1838頁~1840頁 |
|
A 5V/200V SOI Device with a Vertically Linear Graded Drift Region |
|
5. |
楊紹明(Shao-Ming Yang)、許健(Gene Sheu)、蔡宗叡(Jung-Ruey Tsai) ,2010-11, (已刊登)
|
|
ICSICT 2010 卷期:1838頁~1840頁 |
|
A 5V/200V SOI Device with a Vertically Linear Graded Drift Region |
|
6. |
許健(Gene Sheu)、蔡宗叡(Jung-Ruey Tsai)、楊紹明(Shao-Ming Yang) ,2011-11, (已刊登)
|
|
tencon 2010 卷期:1356頁~1360頁 |
|
Self-Consistent Electro-Thermo-Mechanical Analysis of AlN Passivation Effect on AlGaN/GaN HEMTs |
|
7. |
蔡宗叡(Jung-Ruey Tsai)、許健(Gene Sheu)、楊紹明(Shao-Ming Yang) ,2011-11, (已刊登)
|
|
tencon 2010 卷期:760頁~763頁 |
|
Development of ESD Robustness Enhancement of a Novel 800V LDMOS Multiple RESURF with Linear P-top Rings |
|
8. |
許健(Gene Sheu)、楊紹明(Shao-Ming Yang)、蔡宗叡(Jung-Ruey Tsai) ,2011-11, (已刊登)
|
|
tencon 2010 卷期:752頁~755頁 |
|
Design of Multiple RESURF LDMOS with P-top rings and STI regions in 65nm CMOS Technology |
|
|