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非SCI、SSCI、A&HCI、EI、TSSCI...等具審查機制論文 |
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1. |
許健(Gene Sheu)、楊紹明(Shao-Ming Yang) ,2011-07, (已刊登)
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tencon 2010 2010卷期:978頁~990頁 |
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ESD simulation on GGNMOS for 40V BCD |
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2. |
許健(Gene Sheu)、楊紹明(Shao-Ming Yang) ,2011-, (已刊登)
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tencon 2010 2010卷2010期:75頁~77頁 |
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A Novel 800V Multiple RESURF LDMOS Utilizing |
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3. |
許健(Gene Sheu)、楊紹明(Shao-Ming Yang) ,2011-07, (已刊登)
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tencon 2010 2010卷2010期:71頁~74頁 |
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An 800 Volts High Voltage Interconnection Level |
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4. |
許健(Gene Sheu) ,2011-, (已刊登)
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2010 IRAST International Congress on Computer Applications and computational science 2010卷2010期:頁~頁 |
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A 2-dimensional mesh study using sentaurus simulator |
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5. |
楊紹明(Shao-Ming Yang)、許健(Gene Sheu)、蔡宗叡(Jung-Ruey Tsai) ,2010-11, ()
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ICSICT 2010 2010卷2010期:1838頁~1840頁 |
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A 5V/200V SOI Device with a Vertically Linear Graded Drift Region |
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6. |
楊紹明(Shao-Ming Yang)、許健(Gene Sheu)、蔡宗叡(Jung-Ruey Tsai) ,2010-11, (已刊登)
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ICSICT 2010 卷期:1838頁~1840頁 |
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A 5V/200V SOI Device with a Vertically Linear Graded Drift Region |
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7. |
許健(Gene Sheu)、蔡宗叡(Jung-Ruey Tsai)、楊紹明(Shao-Ming Yang) ,2011-11, (已刊登)
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tencon 2010 卷期:1356頁~1360頁 |
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Self-Consistent Electro-Thermo-Mechanical Analysis of AlN Passivation Effect on AlGaN/GaN HEMTs |
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8. |
蔡宗叡(Jung-Ruey Tsai)、許健(Gene Sheu)、楊紹明(Shao-Ming Yang) ,2011-11, (已刊登)
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tencon 2010 卷期:760頁~763頁 |
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Development of ESD Robustness Enhancement of a Novel 800V LDMOS Multiple RESURF with Linear P-top Rings |
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9. |
許健(Gene Sheu)、楊紹明(Shao-Ming Yang)、蔡宗叡(Jung-Ruey Tsai) ,2011-11, (已刊登)
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tencon 2010 卷期:752頁~755頁 |
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Design of Multiple RESURF LDMOS with P-top rings and STI regions in 65nm CMOS Technology |
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