|
|
|
SCI、SSCI、A&HCI、EI、TSSCI期刊論文 |
|
1. |
楊紹明(Shao-Ming Yang)、許健(Gene Sheu)、蔡宗叡(Jung-Ruey Tsai) ,2010-11, (已刊登)
|
|
ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings 1卷3期:1838頁~1840頁 |
|
A 5V/200V SOI Device with a Vertically Linear Graded Drift Region |
|
2. |
楊紹明(Shao-Ming Yang)、許健(Gene Sheu)、蔡宗叡(Jung-Ruey Tsai) ,2011-08, (已刊登)
|
|
ICEMI 1卷期:85頁~88頁 |
|
Application of Multi-Lateral Double Diffused Field Ring in Ultrahigh-Voltage Device MOS Transistor Design |
|
3. |
蔡宗叡(Jung-Ruey Tsai)、許健(Gene Sheu)、楊紹明(Shao-Ming Yang) ,2011-08, (已刊登)
|
|
ICEMI 1卷期:235頁~238頁 |
|
Analysis of Si3N4 passivation effect by self-consistent electro-thermal-mechanical simulation in AlGaN/GaN heterostructure HEMTs |
|
4. |
楊紹明(Shao-Ming Yang)、許健(Gene Sheu)、蔡宗叡(Jung-Ruey Tsai) ,2011-08, (已刊登)
|
|
ICEMI 1卷期:239頁~242頁 |
|
Effects of SiO2 passivation on AlGaN/GaN HEMT by self-consistent electro-thermal-mechanical simulation |
|
5. |
許健(Gene Sheu)、蔡宗叡(Jung-Ruey Tsai)*、楊紹明(Shao-Ming Yang) ,2011-08, (已刊登)
|
|
The Ninth International Conference on Electronic Measurement & Instruments 4卷期:5頁~9頁 |
|
Improvement of Electrical Characteristics in LDMOS by the Insertion of PBL and Gate Extended Field Plate Technologies |
|
6. |
許健(Gene Sheu)、蔡宗叡(Jung-Ruey Tsai)*、楊紹明(Shao-Ming Yang) ,2011-08, (已刊登)
|
|
ICEMI 4卷期:5頁~9頁 |
|
Improvement of Electrical Characteristics in LDMOS by the Insertion of PBL |
|
|