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SCI、SSCI、A&HCI、EI、TSSCI期刊論文 |
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1. |
許健(Gene Sheu)、楊紹明(Shao-Ming Yang) ,2009-01, (已刊登)
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Semiconductor Science and Technology 18卷1期:123頁~124頁 |
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A High Performance 80V Smart LDMOS Power Device Based on Thin SOI Technology |
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2. |
楊紹明(Shao-Ming Yang)、許健(Gene Sheu) ,2009-, (已刊登)
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The Ninth International Conference on Electronic Measurement & Instruments 4卷9期:594頁~597頁 |
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Dependence of Breakdown Voltage on Drift Length and Linear Doping Gradients in SOI RESURF LDMOS Devices |
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3. |
許健(Gene Sheu)、楊紹明(Shao-Ming Yang) ,2010-02, (已刊登)
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ECS Transactions 27卷1期:125頁~129頁 |
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Combining 2D and 3D Device Simulations for Optimizing LDMOS Design |
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4. |
許健(Gene Sheu)、楊紹明(Shao-Ming Yang) ,2010-03, (已刊登)
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ECS Transactions 27卷1期:125頁~129頁 |
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Combining 2D and 3D Device Simulations for Optimizing LDMOS Design |
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5. |
許健(Gene Sheu)、楊紹明(Shao-Ming Yang) ,2010-07, (已刊登)
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JAPANESE JOURNAL OF APPLIED PHYSICS 49卷2010期:074301-1頁~074301-8頁 |
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An Analytical Model of Surface Electric Field Distributionsin in Ultrahigh-Voltage Metal–Oxide–Semiconductor Devices |
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6. |
許健(Gene Sheu)、楊紹明(Shao-Ming Yang) ,2010-02, (已刊登)
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ECS Transactions 27卷1期:115頁~120頁 |
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Reduction of Kink Effect in SOI LDMOS Structure with Linear Drift Region Thickness |
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7. |
許健(Gene Sheu)、楊紹明(Shao-Ming Yang) ,2010-03, (已刊登)
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ECS Transactions 27卷1期:115頁~120頁 |
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Reduction of Kink Effect in SOI LDMOS Structure with Linear Drift Region Thickness |
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8. |
許健(Gene Sheu)、楊紹明(Shao-Ming Yang)、陳兆南 ,2010-02, (已刊登)
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ECS Transactions 27卷1期:103頁~108頁 |
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Comparison of High Voltage (200-300 Volts) Lateral Power MOSFETs for Power Integrated Circuits |
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9. |
許健(Gene Sheu)、楊紹明(Shao-Ming Yang)、陳兆南 ,2010-03, (已刊登)
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ECS Transactions 27卷1期:103頁~108頁 |
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Comparison of High Voltage (200-300 Volts) Lateral Power MOSFETs for Power Integrated Circuits |
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10. |
許健(Gene Sheu)、楊紹明(Shao-Ming Yang)*、張怡楓(Yi-Fong Chang)、曹世昌(Shyh-Chang Tsaur) ,2010-07, (已刊登)
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JAPANESE JOURNAL OF APPLIED PHYSICS 卷49期:74301頁~74308頁 |
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An Analytical Model of Surface Electric Field Distributions in Ultrahigh-Voltage Buried P-top Lateral Diffused Metal-Oxide-Semiconductor Devices |
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11. |
楊紹明(Shao-Ming Yang)、許健(Gene Sheu)、蔡宗叡(Jung-Ruey Tsai) ,2010-11, (已刊登)
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ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings 1卷3期:1838頁~1840頁 |
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A 5V/200V SOI Device with a Vertically Linear Graded Drift Region |
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12. |
許健(Gene Sheu)、楊紹明(Shao-Ming Yang)、曹世昌(Shyh-Chang Tsaur) ,2009-, ()
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SEMICONDUCTOR SCIENCE AND TECHNOLOGY 卷期:頁~頁 |
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An Analytical Model for Surface Electric Field Distributions in Ultra High Voltage (800V) Buried P-top LDMOS Devices |
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13. |
許健(Gene Sheu)、楊紹明(Shao-Ming Yang)、曹世昌(Shyh-Chang Tsaur) ,2009-, ()
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SEMICONDUCTOR SCIENCE AND TECHNOLOGY 卷期:頁~頁 |
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Comparison of High Voltage (200-300 Volts) Devices for Power Integrated Circuits |
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14. |
楊紹明(Shao-Ming Yang)、許健(Gene Sheu) ,2009-, ()
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APPLIED PHYSICS LETTERS 卷期:頁~頁 |
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The Reliability of 200V P-channel Silicon-On-Insulator LDMOS on High Side operation |
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15. |
許健(Gene Sheu)、楊紹明(Shao-Ming Yang) ,2009-03, (已刊登)
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ECS Transactions 18卷期:123頁~128頁 |
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A High Performance 80V Smart LDMOS Power Device Based on Thin SOI Technology |
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16. |
許健(Gene Sheu)、楊紹明(Shao-Ming Yang) ,2010-11, ()
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IEEE Region 10 Annual International Conference, Proceedings/TENCON 卷2010期:71頁~74頁 |
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An 800 Volts High Voltage Interconnection Level Shifter Using Floating Poly Field Plate (FPFP) Method |
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17. |
許健(Gene Sheu)、楊紹明(Shao-Ming Yang) ,2010-11, (已刊登)
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IEEE Region 10 Annual International Conference, Proceedings/TENCON 卷1期:71頁~74頁 |
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An 800 Volts High Voltage Interconnection Level Shifter Using Floating Poly Field Plate (FPFP) Method |
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18. |
許健(Gene Sheu)、楊紹明(Shao-Ming Yang) ,2010-11, ()
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IEEE Region 10 Annual International Conference, Proceedings/TENCON 2010卷2010期:75頁~79頁 |
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A Novel 800V Multiple RESURF LDMOS Utilizing Linear P-top Rings |
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19. |
許健(Gene Sheu)、楊紹明(Shao-Ming Yang) ,2010-11, (已刊登)
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IEEE Region 10 Annual International Conference, Proceedings/TENCON 卷1期:75頁~79頁 |
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A Novel 800V Multiple RESURF LDMOS Utilizing Linear P-top Rings |
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20. |
許健(Gene Sheu)、楊紹明(Shao-Ming Yang) ,2010-10, (已刊登)
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IEEE Region 10 Annual International Conference, Proceedings/TENCON 卷1期:80頁~83頁 |
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ESD Simulation on GGNMOS for 40V BCD |
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21. |
楊紹明(Shao-Ming Yang)、許健(Gene Sheu)、蔡宗叡(Jung-Ruey Tsai) ,2011-08, (已刊登)
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ICEMI 1卷期:85頁~88頁 |
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Application of Multi-Lateral Double Diffused Field Ring in Ultrahigh-Voltage Device MOS Transistor Design |
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22. |
蔡宗叡(Jung-Ruey Tsai)、許健(Gene Sheu)、楊紹明(Shao-Ming Yang) ,2011-08, (已刊登)
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ICEMI 1卷期:235頁~238頁 |
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Analysis of Si3N4 passivation effect by self-consistent electro-thermal-mechanical simulation in AlGaN/GaN heterostructure HEMTs |
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23. |
楊紹明(Shao-Ming Yang)、許健(Gene Sheu)、蔡宗叡(Jung-Ruey Tsai) ,2011-08, (已刊登)
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ICEMI 1卷期:239頁~242頁 |
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Effects of SiO2 passivation on AlGaN/GaN HEMT by self-consistent electro-thermal-mechanical simulation |
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24. |
許健(Gene Sheu)、蔡宗叡(Jung-Ruey Tsai)*、楊紹明(Shao-Ming Yang) ,2011-08, (已刊登)
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The Ninth International Conference on Electronic Measurement & Instruments 4卷期:5頁~9頁 |
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Improvement of Electrical Characteristics in LDMOS by the Insertion of PBL and Gate Extended Field Plate Technologies |
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25. |
許健(Gene Sheu)、蔡宗叡(Jung-Ruey Tsai)*、楊紹明(Shao-Ming Yang) ,2011-08, (已刊登)
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ICEMI 4卷期:5頁~9頁 |
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Improvement of Electrical Characteristics in LDMOS by the Insertion of PBL |
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