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研究計畫 |
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1. |
蔡宗叡 國科會 2011.12.1 ~2012.10.31
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複晶矽薄膜矽與二氧化矽結構上之磷摻雜劑量損失行為模式 |
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SCI、SSCI、A&HCI、EI、TSSCI期刊論文 |
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1. |
楊紹明(Shao-Ming Yang)、許健(Gene Sheu)、蔡宗叡(Jung-Ruey Tsai) ,2010-11, (已刊登)
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ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings 1卷3期:1838頁~1840頁 |
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A 5V/200V SOI Device with a Vertically Linear Graded Drift Region |
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2. |
楊紹明(Shao-Ming Yang)、許健(Gene Sheu)、蔡宗叡(Jung-Ruey Tsai) ,2011-08, (已刊登)
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ICEMI 1卷期:85頁~88頁 |
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Application of Multi-Lateral Double Diffused Field Ring in Ultrahigh-Voltage Device MOS Transistor Design |
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3. |
蔡宗叡(Jung-Ruey Tsai)、許健(Gene Sheu)、楊紹明(Shao-Ming Yang) ,2011-08, (已刊登)
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ICEMI 1卷期:235頁~238頁 |
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Analysis of Si3N4 passivation effect by self-consistent electro-thermal-mechanical simulation in AlGaN/GaN heterostructure HEMTs |
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4. |
楊紹明(Shao-Ming Yang)、許健(Gene Sheu)、蔡宗叡(Jung-Ruey Tsai) ,2011-08, (已刊登)
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ICEMI 1卷期:239頁~242頁 |
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Effects of SiO2 passivation on AlGaN/GaN HEMT by self-consistent electro-thermal-mechanical simulation |
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5. |
許健(Gene Sheu)、蔡宗叡(Jung-Ruey Tsai)*、楊紹明(Shao-Ming Yang) ,2011-08, (已刊登)
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The Ninth International Conference on Electronic Measurement & Instruments 4卷期:5頁~9頁 |
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Improvement of Electrical Characteristics in LDMOS by the Insertion of PBL and Gate Extended Field Plate Technologies |
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6. |
許健(Gene Sheu)、蔡宗叡(Jung-Ruey Tsai)*、楊紹明(Shao-Ming Yang) ,2011-08, (已刊登)
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ICEMI 4卷期:5頁~9頁 |
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Improvement of Electrical Characteristics in LDMOS by the Insertion of PBL |
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非SCI、SSCI、A&HCI、EI、TSSCI...等具審查機制論文 |
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1. |
楊紹明(Shao-Ming Yang)、許健(Gene Sheu)、蔡宗叡(Jung-Ruey Tsai) ,2010-11, ()
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ICSICT 2010 2010卷2010期:1838頁~1840頁 |
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A 5V/200V SOI Device with a Vertically Linear Graded Drift Region |
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2. |
楊紹明(Shao-Ming Yang)、許健(Gene Sheu)、蔡宗叡(Jung-Ruey Tsai) ,2010-11, (已刊登)
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ICSICT 2010 卷期:1838頁~1840頁 |
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A 5V/200V SOI Device with a Vertically Linear Graded Drift Region |
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3. |
許健(Gene Sheu)、蔡宗叡(Jung-Ruey Tsai)、楊紹明(Shao-Ming Yang) ,2011-11, (已刊登)
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tencon 2010 卷期:1356頁~1360頁 |
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Self-Consistent Electro-Thermo-Mechanical Analysis of AlN Passivation Effect on AlGaN/GaN HEMTs |
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4. |
蔡宗叡(Jung-Ruey Tsai)、許健(Gene Sheu)、楊紹明(Shao-Ming Yang) ,2011-11, (已刊登)
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tencon 2010 卷期:760頁~763頁 |
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Development of ESD Robustness Enhancement of a Novel 800V LDMOS Multiple RESURF with Linear P-top Rings |
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5. |
許健(Gene Sheu)、楊紹明(Shao-Ming Yang)、蔡宗叡(Jung-Ruey Tsai) ,2011-11, (已刊登)
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tencon 2010 卷期:752頁~755頁 |
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Design of Multiple RESURF LDMOS with P-top rings and STI regions in 65nm CMOS Technology |
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參與研討會 |
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1. |
蔡宗叡 2011-11-21~2011-11-24
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IEEE TENCON 2011 |
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2. |
蔡宗叡 2012-06-04~2012-06-06
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IEEE IS3C 2012 |
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