|
|
|
研究計畫 |
|
1. |
楊紹明 國科會 2009.08.1 ~2010.07.31
|
|
超高壓功率元件結構開發與三維佈局設計之模擬研究 |
|
2. |
楊紹明 國科會 2011.08.1 ~2012.07.31
|
|
新穎功率元件靜電防護結構之設計研究與可靠度測試在2維/3維元件模擬系統之建立 |
|
SCI、SSCI、A&HCI、EI、TSSCI期刊論文 |
|
1. |
許健(Gene Sheu)、楊紹明(Shao-Ming Yang) ,2009-01, (已刊登)
|
|
Semiconductor Science and Technology 18卷1期:123頁~124頁 |
|
A High Performance 80V Smart LDMOS Power Device Based on Thin SOI Technology |
|
2. |
楊紹明(Shao-Ming Yang)、許健(Gene Sheu) ,2009-, (已刊登)
|
|
The Ninth International Conference on Electronic Measurement & Instruments 4卷9期:594頁~597頁 |
|
Dependence of Breakdown Voltage on Drift Length and Linear Doping Gradients in SOI RESURF LDMOS Devices |
|
3. |
許健(Gene Sheu)、楊紹明(Shao-Ming Yang) ,2010-02, (已刊登)
|
|
ECS Transactions 27卷1期:125頁~129頁 |
|
Combining 2D and 3D Device Simulations for Optimizing LDMOS Design |
|
4. |
許健(Gene Sheu)、楊紹明(Shao-Ming Yang) ,2010-03, (已刊登)
|
|
ECS Transactions 27卷1期:125頁~129頁 |
|
Combining 2D and 3D Device Simulations for Optimizing LDMOS Design |
|
5. |
許健(Gene Sheu)、楊紹明(Shao-Ming Yang) ,2010-07, (已刊登)
|
|
JAPANESE JOURNAL OF APPLIED PHYSICS 49卷2010期:074301-1頁~074301-8頁 |
|
An Analytical Model of Surface Electric Field Distributionsin in Ultrahigh-Voltage Metal–Oxide–Semiconductor Devices |
|
6. |
許健(Gene Sheu)、楊紹明(Shao-Ming Yang) ,2010-02, (已刊登)
|
|
ECS Transactions 27卷1期:115頁~120頁 |
|
Reduction of Kink Effect in SOI LDMOS Structure with Linear Drift Region Thickness |
|
7. |
許健(Gene Sheu)、楊紹明(Shao-Ming Yang) ,2010-03, (已刊登)
|
|
ECS Transactions 27卷1期:115頁~120頁 |
|
Reduction of Kink Effect in SOI LDMOS Structure with Linear Drift Region Thickness |
|
8. |
許健(Gene Sheu)、楊紹明(Shao-Ming Yang)、陳兆南 ,2010-02, (已刊登)
|
|
ECS Transactions 27卷1期:103頁~108頁 |
|
Comparison of High Voltage (200-300 Volts) Lateral Power MOSFETs for Power Integrated Circuits |
|
9. |
許健(Gene Sheu)、楊紹明(Shao-Ming Yang)、陳兆南 ,2010-03, (已刊登)
|
|
ECS Transactions 27卷1期:103頁~108頁 |
|
Comparison of High Voltage (200-300 Volts) Lateral Power MOSFETs for Power Integrated Circuits |
|
10. |
許健(Gene Sheu)、楊紹明(Shao-Ming Yang)*、張怡楓(Yi-Fong Chang)、曹世昌(Shyh-Chang Tsaur) ,2010-07, (已刊登)
|
|
JAPANESE JOURNAL OF APPLIED PHYSICS 卷49期:74301頁~74308頁 |
|
An Analytical Model of Surface Electric Field Distributions in Ultrahigh-Voltage Buried P-top Lateral Diffused Metal-Oxide-Semiconductor Devices |
|
11. |
楊紹明(Shao-Ming Yang)、許健(Gene Sheu)、蔡宗叡(Jung-Ruey Tsai) ,2010-11, (已刊登)
|
|
ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings 1卷3期:1838頁~1840頁 |
|
A 5V/200V SOI Device with a Vertically Linear Graded Drift Region |
|
12. |
許健(Gene Sheu)、楊紹明(Shao-Ming Yang)、曹世昌(Shyh-Chang Tsaur) ,2009-, ()
|
|
SEMICONDUCTOR SCIENCE AND TECHNOLOGY 卷期:頁~頁 |
|
An Analytical Model for Surface Electric Field Distributions in Ultra High Voltage (800V) Buried P-top LDMOS Devices |
|
13. |
許健(Gene Sheu)、楊紹明(Shao-Ming Yang)、曹世昌(Shyh-Chang Tsaur) ,2009-, ()
|
|
SEMICONDUCTOR SCIENCE AND TECHNOLOGY 卷期:頁~頁 |
|
Comparison of High Voltage (200-300 Volts) Devices for Power Integrated Circuits |
|
14. |
楊紹明(Shao-Ming Yang)、許健(Gene Sheu) ,2009-, ()
|
|
APPLIED PHYSICS LETTERS 卷期:頁~頁 |
|
The Reliability of 200V P-channel Silicon-On-Insulator LDMOS on High Side operation |
|
15. |
許健(Gene Sheu)、楊紹明(Shao-Ming Yang) ,2009-03, (已刊登)
|
|
ECS Transactions 18卷期:123頁~128頁 |
|
A High Performance 80V Smart LDMOS Power Device Based on Thin SOI Technology |
|
16. |
許健(Gene Sheu)、楊紹明(Shao-Ming Yang) ,2010-11, ()
|
|
IEEE Region 10 Annual International Conference, Proceedings/TENCON 卷2010期:71頁~74頁 |
|
An 800 Volts High Voltage Interconnection Level Shifter Using Floating Poly Field Plate (FPFP) Method |
|
17. |
許健(Gene Sheu)、楊紹明(Shao-Ming Yang) ,2010-11, (已刊登)
|
|
IEEE Region 10 Annual International Conference, Proceedings/TENCON 卷1期:71頁~74頁 |
|
An 800 Volts High Voltage Interconnection Level Shifter Using Floating Poly Field Plate (FPFP) Method |
|
18. |
許健(Gene Sheu)、楊紹明(Shao-Ming Yang) ,2010-11, ()
|
|
IEEE Region 10 Annual International Conference, Proceedings/TENCON 2010卷2010期:75頁~79頁 |
|
A Novel 800V Multiple RESURF LDMOS Utilizing Linear P-top Rings |
|
19. |
許健(Gene Sheu)、楊紹明(Shao-Ming Yang) ,2010-11, (已刊登)
|
|
IEEE Region 10 Annual International Conference, Proceedings/TENCON 卷1期:75頁~79頁 |
|
A Novel 800V Multiple RESURF LDMOS Utilizing Linear P-top Rings |
|
20. |
許健(Gene Sheu)、楊紹明(Shao-Ming Yang) ,2010-10, (已刊登)
|
|
IEEE Region 10 Annual International Conference, Proceedings/TENCON 卷1期:80頁~83頁 |
|
ESD Simulation on GGNMOS for 40V BCD |
|
21. |
楊紹明(Shao-Ming Yang)、許健(Gene Sheu)、蔡宗叡(Jung-Ruey Tsai) ,2011-08, (已刊登)
|
|
ICEMI 1卷期:85頁~88頁 |
|
Application of Multi-Lateral Double Diffused Field Ring in Ultrahigh-Voltage Device MOS Transistor Design |
|
22. |
蔡宗叡(Jung-Ruey Tsai)、許健(Gene Sheu)、楊紹明(Shao-Ming Yang) ,2011-08, (已刊登)
|
|
ICEMI 1卷期:235頁~238頁 |
|
Analysis of Si3N4 passivation effect by self-consistent electro-thermal-mechanical simulation in AlGaN/GaN heterostructure HEMTs |
|
23. |
楊紹明(Shao-Ming Yang)、許健(Gene Sheu)、蔡宗叡(Jung-Ruey Tsai) ,2011-08, (已刊登)
|
|
ICEMI 1卷期:239頁~242頁 |
|
Effects of SiO2 passivation on AlGaN/GaN HEMT by self-consistent electro-thermal-mechanical simulation |
|
24. |
許健(Gene Sheu)、蔡宗叡(Jung-Ruey Tsai)*、楊紹明(Shao-Ming Yang) ,2011-08, (已刊登)
|
|
The Ninth International Conference on Electronic Measurement & Instruments 4卷期:5頁~9頁 |
|
Improvement of Electrical Characteristics in LDMOS by the Insertion of PBL and Gate Extended Field Plate Technologies |
|
25. |
許健(Gene Sheu)、蔡宗叡(Jung-Ruey Tsai)*、楊紹明(Shao-Ming Yang) ,2011-08, (已刊登)
|
|
ICEMI 4卷期:5頁~9頁 |
|
Improvement of Electrical Characteristics in LDMOS by the Insertion of PBL |
|
非SCI、SSCI、A&HCI、EI、TSSCI...等具審查機制論文 |
|
1. |
許健(Gene Sheu)、楊紹明(Shao-Ming Yang) ,2011-07, (已刊登)
|
|
tencon 2010 2010卷期:978頁~990頁 |
|
ESD simulation on GGNMOS for 40V BCD |
|
2. |
許健(Gene Sheu)、楊紹明(Shao-Ming Yang) ,2011-, (已刊登)
|
|
tencon 2010 2010卷2010期:75頁~77頁 |
|
A Novel 800V Multiple RESURF LDMOS Utilizing |
|
3. |
許健(Gene Sheu)、楊紹明(Shao-Ming Yang) ,2011-07, (已刊登)
|
|
tencon 2010 2010卷2010期:71頁~74頁 |
|
An 800 Volts High Voltage Interconnection Level |
|
4. |
楊紹明(Shao-Ming Yang)、許健(Gene Sheu)、蔡宗叡(Jung-Ruey Tsai) ,2010-11, ()
|
|
ICSICT 2010 2010卷2010期:1838頁~1840頁 |
|
A 5V/200V SOI Device with a Vertically Linear Graded Drift Region |
|
5. |
楊紹明(Shao-Ming Yang)、許健(Gene Sheu)、蔡宗叡(Jung-Ruey Tsai) ,2010-11, (已刊登)
|
|
ICSICT 2010 卷期:1838頁~1840頁 |
|
A 5V/200V SOI Device with a Vertically Linear Graded Drift Region |
|
6. |
許健(Gene Sheu)、蔡宗叡(Jung-Ruey Tsai)、楊紹明(Shao-Ming Yang) ,2011-11, (已刊登)
|
|
tencon 2010 卷期:1356頁~1360頁 |
|
Self-Consistent Electro-Thermo-Mechanical Analysis of AlN Passivation Effect on AlGaN/GaN HEMTs |
|
7. |
蔡宗叡(Jung-Ruey Tsai)、許健(Gene Sheu)、楊紹明(Shao-Ming Yang) ,2011-11, (已刊登)
|
|
tencon 2010 卷期:760頁~763頁 |
|
Development of ESD Robustness Enhancement of a Novel 800V LDMOS Multiple RESURF with Linear P-top Rings |
|
8. |
許健(Gene Sheu)、楊紹明(Shao-Ming Yang)、蔡宗叡(Jung-Ruey Tsai) ,2011-11, (已刊登)
|
|
tencon 2010 卷期:752頁~755頁 |
|
Design of Multiple RESURF LDMOS with P-top rings and STI regions in 65nm CMOS Technology |
|
研討會論文 |
|
1. |
楊紹明(Shao-Ming Yang)、許健(Gene Sheu) 2009.08.16~2009.08.19
|
|
Dependence of Breakdown Voltage on Drift Length and Linear Doping Gradients in SOI RESURF LDMOS Devices |
|
The International Conference on Electronic Measurement & Instruments (ICEMI) |
|
2. |
楊紹明(Shao-Ming Yang) 2010.08.3 ~2010.08.6
|
|
Optimizing NSCR ESD Protection Device for BCD 40V Technology |
|
第二十一屆超大型積體電路設計暨計算機輔助設計技術研討會 |
|
獲獎 |
|
1. |
楊紹明(Shao-Ming Yang) 2010-10-23
|
|
國科會電力學門--新進人員優選 |
|
指導碩博士論文 |
|
1. |
楊紹明 2008
|
|
高壓0.18微米, 60V (SOI LDMOS)功率元件之研究 |
|
許渝珊 |
|
2. |
楊紹明 2009
|
|
200V SOI PLDMOS 的熱載子可靠性研究 |
|
楊惠婷 |
|
3. |
楊紹明 2009
|
|
利用垂直線性摻雜漂移區發展高壓SOI元件 |
|
林盈宏 |
|
|